Spin-mediated Mott excitons

نویسندگان

چکیده

Motivated by recent experiments on Mott insulators, in both iridates and ultracold atoms, we theoretically study the effects of magnetic order Mott-Hubbard excitons. In particular, focus spin-mediated doublon-holon pairing Hubbard materials. We use several complementary theoretical techniques: Mean-field theory to describe spin degrees freedom, self-consistent Born approximation characterize individual charge excitations across gap, Bethe-Salpeter equation identify bound states doublons holons. The binding energy exciton is found increase with increasing N\'eel parameter, whereas mass decreases. observe that these trends rely significantly retardation effective interaction, require consideration multiple from changing order. Our results are consistent key qualitative observed iridates. Moreover, findings could have direct implications atom insulators where model exact description system microscopic freedom can be directly accessed.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Spin transport of excitons.

We report on observation of the spin transport of spatially indirect excitons in GaAs/AlGaAs coupled quantum wells (CQW). Exciton spin transport over substantial distances, up to several micrometers in the present work, is achieved due to orders of magnitude enhancement of the exciton spin relaxation time in CQW with respect to conventional quantum wells.

متن کامل

Mott transition of excitons in GaAs-GaAlAs quantum wells

We investigate the breakup of bound electron–hole pairs, known as Mott transition of excitons, in GaAs-GaAlAs quantum wells with increasing excitation, comparing two different theoretical approaches. Firstly, a thermodynamic approach is used to investigate the ionization equilibrium between electrons, holes and excitons, where the abrupt jump of the degree of ionization from 0 to 1 indicates th...

متن کامل

Biexcitonic molecules survive excitons at the Mott transition.

When the carrier density is increased in a semiconductor, according to the predictions of Sir Nevil Mott, a transition should occur from an insulating state consisting of a gas of excitons to a conductive electron-hole plasma. This crossover, usually referred to as the Mott transition, is driven by the mutual effects of phase-space filling and Coulomb screening because of the presence of other ...

متن کامل

Exotic quantum spin models in spin-orbit-coupled Mott insulators.

We study cold atoms in an optical lattice with synthetic spin-orbit coupling in the Mott-insulator regime. We calculate the parameters of the corresponding tight-binding model using Peierls substitution and "localized Wannier states method" and derive the low-energy spin Hamiltonian for bosons and fermions. The spin Hamiltonian is a combination of Heisenberg model, quantum compass model and Dzy...

متن کامل

Super-long life time for 2D cyclotron spin-flip excitons

An experimental technique for the indirect manipulation and detection of electron spins entangled in two-dimensional magnetoexcitons has been developed. The kinetics of the spin relaxation has been investigated. Photoexcited spin-magnetoexcitons were found to exhibit extremely slow relaxation in specific quantum Hall systems, fabricated in high mobility GaAs/AlGaAs structures; namely, the relax...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Physical review

سال: 2023

ISSN: ['0556-2813', '1538-4497', '1089-490X']

DOI: https://doi.org/10.1103/physrevb.107.075111